Structural effects on the performance of microfabricated in-plane <b> <i>π</i> </b>-type thermoelectric devices composed of p-type Mg2Sn0.8Ge0.2 and n-type Bi layers

Miniaturized in-plane π-type thermoelectric devices composed of p-type Mg2Sn0.8Ge0.2 and n-type Bi layers were prepared by microfabrication techniques. Structural effects on device performance need to be evaluated optimized improve operation. In this study, a rational analysis the correction open-circuit output voltages, powers, power densities using effective temperature differences was performed, geometries (e.g., number π junctions cross-sectional area ratio between p- layers) determined comparing different types devices. The results revealed that it is crucial consider heat transfer loss caused thermal contact in optimize structural device. Proper trends p–n pairs observed, which indicated reasonable operation microfabricated